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2. Gate‐Tunable Hole and Electron Carrier Transport in Atomically Thin Dual‐Channel WSe2/MoS2 Heterostructure for Ambipolar Field‐Effect Transistors. Issue 43 (13th September 2016)

10. Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment. Issue 4 (11th January 2017)