Hole dephasing caused by hole–hole interaction in a multilayered black phosphorus. (26th September 2017)

• Record Type: Journal Article
• Authors: Li, Lijun; Khan, Muhammad Atif; Lee, Yoontae; Lee, Inyeal; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho
• Is Part Of: Journal of physics. Volume 29:Number 43(2017)
• Publication Date: 2017-09-26
• Subjects: black phosphorus -- weak localization -- hole dephasing; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/aa87de
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: We study the magnetotransport of holes in a multilayered black phosphorus in a temperature range of 1.9 to 21.5 K. We observed a negative magnetoresistance at magnetic fields up to 1.5 T. This negative magetoresistance was analyzed by weak localization theory in diffusive regime. At the lowest temperature and the highest carrier density we found a phase coherence length of 48 nm. The linear temperature dependence of the dephasing rate shows that the hole–hole scattering processes with small energy transfer are the dominant contribution in breaking the carrier phase coherence.