1. Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering. (7th March 2023) Authors: Weng, You-Chen; Hsu, Heng-Tung; Tsao, Yi-Fan; Panda, Debashis; Huang, Hsuan-Yao; Kao, Min-Lu; Lan, Yu-Pin; Chang, Edward Yi; Lee, Ching-Ting Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Fabricating GaN-based LEDs on (−2 0 1) β-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition. (19th September 2019) Authors: Lan, Yu-Pin; Chen, Yen-Chun; Yeh, Yi-Yun; Hung, Shun-Ming Journal: Japanese journal of applied physics Issue: Volume 58:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer. (2nd March 2016) Authors: Yen, Shiang-Shiou; Cheng, Chun-Hu; Lan, Yu-Pin; Chiu, Yu-Chien; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chang, Shao-Chin; Jiang, Zhe-Wei; Hung, Li-Yue; Tsai, Chi-Chung; Chang, Chun-Yen Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗