Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering. (7th March 2023)

• Record Type: Journal Article
• Authors: Weng, You-Chen; Hsu, Heng-Tung; Tsao, Yi-Fan; Panda, Debashis; Huang, Hsuan-Yao; Kao, Min-Lu; Lan, Yu-Pin; Chang, Edward Yi; Lee, Ching-Ting
• Is Part Of: ECS journal of solid state science and technology. Volume 12:Number 3(2023)
• Publication Date: 2023-03-07
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/acbf72
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper, we demonstrate the AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate using an AlGaN back-barrier (BB) and super-lattice (SL) buffer to achieve high breakdown and low current collapse (CC) properties for Radio-frequency (RF) applications. The HEMTs also demonstrated low initial vertical leakage current, high thermal stability, and smaller drain-lag with reduced leakage currents as compared to the devices using step-graded (SG) AlGaN buffer. Also, the device showed improved RF performances with higher f T and f max as compared to the devices with SG buffer.