1. Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy. (11th July 2018) Authors: Liu, Xianhe; Pandey, Ayush; Laleyan, David A; Mashooq, Kishwar; Reid, Eric T; Shin, Walter Jin; Mi, Zetian Journal: Semiconductor science and technology Issue: Volume 33:Number 8(2018:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗