Date: 2016 / Author/Creator: Labat, N. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Date 2016 Author/Creator Labat, N.

1. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016)

Authors:: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 594
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016)

Authors:: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 594
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗