Author/Creator: Labat, N. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Labat, N.

1. Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes. Issue 9 (August 2015)

Authors:: Del Vecchio, P.; Curutchet, A.; Deshayes, Y.; Bettiati, M.; Laruelle, F.; Labat, N.; Béchou, L.
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 9/10(2015)
Page Start:: 1741
Record Type:: Journal Article
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2. Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Issue 9 (August 2015)

Authors:: Rzin, M.; Labat, N.; Malbert, N.; Curutchet, A.; Brunel, L.; Lambert, B.
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 9/10(2015)
Page Start:: 1672
Record Type:: Journal Article
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3. Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests. (September 2019)

Authors:: Magnier, F.; Lambert, B.; Chang, C.; Curutchet, A.; Labat, N.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 100/101(2019)
Page Start:
Record Type:: Journal Article
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4. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016)

Authors:: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 594
Record Type:: Journal Article
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5. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016)

Authors:: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 594
Record Type:: Journal Article
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6. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. (September 2017)

Authors:: Mukherjee, K.; Darracq, F.; Curutchet, A.; Malbert, N.; Labat, N.
Journal:: Microelectronics and reliability
Issue:: Volume 76/77(2017)
Page Start:: 350
Record Type:: Journal Article
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