1. Ar-Plasma-Modulated Optical Reset in the SiO2/Cu Conductive-Bridge Resistive Memory Stack. (20th July 2018) Authors: Kawashima, Tomohito; Yew, Kwang Sing; Zhou, Yu; Ang, Diing Shenp; Zhang, Haizhong; Kyuno, Kentaro Journal: ECS transactions Issue: Volume 86:Number 3(2018) Page Start: 55 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Crystallization of Ge thin films by Au-induced layer exchange: effect of Au layer thickness on Ge crystal orientation. (28th January 2022) Authors: Sunthornpan, Narin; Kimura, Kenjiro; Kyuno, Kentaro Journal: Japanese journal of applied physics Issue: Volume 61:Number SB(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization. (5th August 2020) Authors: Sunthornpan, Narin; Tauchi, Kohtaroh; Tezuka, Nairu; Kyuno, Kentaro Journal: Japanese journal of applied physics Issue: Volume 59:Number 8(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effect of seed layers on structure of self-organized Ag nanodots on MgO substrates. (21st May 2015) Authors: Kamiko, Masao; Suenaga, Ryo; Koo, Jung-Woo; Nose, Kenji; Kyuno, Kentaro; Mitsuda, Yoshitaka; Ha, Jae-Geun Journal: Japanese journal of applied physics Issue: Volume 54:Number 6(2015:Jun.)Supplement 1 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Fabrication of self-organized epitaxial fcc-Ag(110)-oriented nanorods by a Ti seed-layer-assisted thermal agglomeration method. (17th February 2015) Authors: Kamiko, Masao; Suenaga, Ryo; Koo, Jung-Woo; Nose, Kenji; Kyuno, Kentaro; Ha, Jae-Geun Journal: Applied physics express Issue: Volume 8:Number 3(2015:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor. (24th August 2017) Authors: Suzuki, Tatsuya; Joseph, Benedict Mutunga; Fukai, Misato; Kamiko, Masao; Kyuno, Kentaro Journal: Applied physics express Issue: Volume 10:Number 9(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗