Crystallization of Ge thin films by Au-induced layer exchange: effect of Au layer thickness on Ge crystal orientation. (28th January 2022)

• Record Type: Journal Article
• Authors: Sunthornpan, Narin; Kimura, Kenjiro; Kyuno, Kentaro
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SB(2022)
• Publication Date: 2022-01-28
• Subjects: Au-induced layer exchange -- Metal−induced crystallization (MIC) -- Semiconductor -- Crystallization -- Germanium -- Low-temperature crystallization; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac2419
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Au layer thickness dependence (9–34 nm) of Ge crystallization in the metal-induced layer exchange process has been investigated. It has been found that Ge crystals are (111) oriented when the Au layer is as thin as 9 nm, whereas crystal grains are randomly oriented when the Au layer is as thick as 34 nm. The difference is discussed in terms of the difference in the position of nucleation sites of Ge crystals.