1. (Invited) A New Application of Ge1−xSnx: Thermoelectric Materials. (20th July 2018) Authors: Kurosawa, Masashi; Imai, Yukihiro; Iwahashi, Taisei; Takahashi, Kouta; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 321 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits. (14th September 2015) Authors: Zaima, Shigeaki; Nakatsuka, Osamu; Yamaha, Takashi; Asano, Takanori; Ike, Shinichi; Suzuki, Akihiro; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, Mitsuo Journal: ECS transactions Issue: Volume 69:Number 10(2015) Page Start: 89 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications. (3rd July 2019) Authors: Nakatsuka, Osamu; Fukuda, Masahiro; Sakashita, Mitsuo; Kurosawa, Masashi; Shibayama, Shigehisa; Zaima, Shigeaki Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 41 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. (Invited) Growth and Applications of Si1-xSnx Thin Films. (1st August 2017) Authors: Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki Journal: ECS transactions Issue: Volume 80:Number 4(2017) Page Start: 253 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. (Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design. (8th September 2020) Authors: Nakatsuka, Osamu; Shibayama, Shigehisa; Kurosawa, Masashi; Sakashita, Mitsuo Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 149 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Close-spaced evaporation of CaGe2 films for scalable GeH film formation. (September 2021) Authors: Hara, Kosuke O.; Kunieda, Shin; Yamanaka, Junji; Arimoto, Keisuke; Itoh, Mai; Kurosawa, Masashi Journal: Materials science in semiconductor processing Issue: Volume 132(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region. Issue 2 (27th November 2021) Authors: Peng, Ying; Miao, Lei; Liu, Chengyan; Song, Haili; Kurosawa, Masashi; Nakatsuka, Osamu; Back, Song Yi; Rhyee, Jong Soo; Murata, Masayuki; Tanemura, Sakae; Baba, Takahiro; Baba, Tetsuya; Ishizaki, Takahiro; Mori, Takao Journal: Advanced energy materials Issue: Volume 12:Issue 2(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Continuous Growth of Germanene and Stanene Lateral Heterostructures. Issue 10 (30th March 2020) Authors: Ogikubo, Tsuyoshi; Shimazu, Hiroki; Fujii, Yuya; Ito, Koichi; Ohta, Akio; Araidai, Masaaki; Kurosawa, Masashi; Le Lay, Guy; Yuhara, Junji Journal: Advanced materials interfaces Issue: Volume 7:Issue 10(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Control of Ge1−x−ySixSny layer lattice constant for energy band alignment in Ge1−xSnx/Ge1−x−ySixSny heterostructures. (7th September 2017) Authors: Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki Journal: Semiconductor science and technology Issue: Volume 32:Number 10(2017:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments. (1st May 2022) Authors: Itoh, Mai; Araidai, Masaaki; Ohta, Akio; Nakatsuka, Osamu; Kurosawa, Masashi Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗