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You searched for: Author/Creator Kurishima, K.Limit your search
- Kurishima, K. [remove] 3
- 621.381 3
- Electronics -- Periodicals 3
- double heterojunction bipolar transistor -- DHBT -- passivation ledge -- composite emitter structure -- wet etching -- size 0.25 mum -- InP‐InAlGaAs‐GaAsSb 1
- double heterojunction bipolar transistors -- high collector current density -- high breakdown voltage -- doping level -- field buffer -- effective depletion thickness -- high‐speed performance -- voltage 12 V -- frequency 470 GHz to 173 GHz -- wavelength 0.25 mum -- size 30 nm to 250 nm -- InGaAs‐InAlGaAs‐InP 1
- heterojunction bipolar transistors -- passivation -- etching -- semiconductor device breakdown -- III‐V semiconductors -- indium compounds -- aluminium compounds -- gallium arsenide 1
- high‐symbol‐rate optical transmission -- HBT MUX‐DAC module -- ultra‐broadband digital‐to‐analogue converter -- half‐rate clock -- connectors -- broadband characteristics -- four‐level pulse amplitude modulation signals -- PAM4 signals -- eye openings -- high‐symbol‐rate optical transmitters -- word length 6 bit -- size 1 mm -- InP 1
- indium compounds -- gallium arsenide -- III‐V semiconductors -- heterojunction bipolar transistors -- current density -- aluminium compounds -- semiconductor doping 1
- indium compounds -- heterojunction bipolar transistors -- bipolar transistor circuits -- multiplexing equipment -- III‐V semiconductors -- optical communication -- digital‐analogue conversion -- pulse amplitude modulation -- optical modulation 1