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Author/Creator Kuraguchi, Masahiko

1. 3.2 mΩcm2 enhancement‐mode GaN MOSFETs with breakdown voltage of 800 V. Issue 5 (29th March 2016)

Authors:
Saito, Hisashi; Yumoto, Miki; Fukatsu, Shigeto; Kajiwara, Yosuke; Shindome, Aya; Oasa, Kohei; Takada, Yoshiharu; Tsuda, Kunio; Kuraguchi, Masahiko
Other Names:
Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor.
Journal:
Physica status solidi
Issue:
Volume 13:Issue 5/6(2016:May)
Page Start:
332
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface. Issue 10 (19th December 2017)

Authors:
Uesugi, Kenjiro; Shindome, Aya; Kajiwara, Yosuke; Yonehara, Toshiya; Kato, Daimotsu; Hikosaka, Toshiki; Kuraguchi, Masahiko; Nunoue, Shinya
Other Names:
Scholz Ferdinand guestEditor.; Schwarz Ulrich guestEditor.; Vescan Andrei guestEditor.; Wernicke Tim guestEditor.
Journal:
Physica status solidi
Issue:
Volume 215:Issue 10(2018)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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