1. Design and analysis of tri-layered strained channel HOI CGAA FET. (6th October 2022) Authors: Barik, Rasmita; Kumar, Kuleen; Dhar, Rudra Sankar Journal: International journal of nanoparticles Issue: Volume 14:Number 2/4(2022) Page Start: 138 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Design of DG MOSFET with Tri-Layered Strained Silicon Channel. (April 2020) Authors: Kumar, Kuleen; Khiangte, Lalthanpuii; Sankar Dhar, Rudra Journal: Journal of physics Issue: Volume 1478(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Exploration of improved leakage based performance analysis for underlap induced strained-Si layer in tri-layered channel DG nanoFETs. (16th August 2021) Authors: Kumar, Kuleen; Dhar, Rudra Sankar Journal: Physica scripta Issue: Volume 96:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗