Design and analysis of tri-layered strained channel HOI CGAA FET. (6th October 2022)

• Record Type: Journal Article
• Authors: Barik, Rasmita; Kumar, Kuleen; Dhar, Rudra Sankar
• Is Part Of: International journal of nanoparticles. Volume 14:Number 2/4(2022)
• Page Start: 138
• Page End: 146
• Publication Date: 2022-10-06
• Subjects: carrier mobility -- carrier confinement -- current density -- electric field; Nanotechnology -- Periodicals; 620.505
• Languages: English
• ISSNs: 1753-2507

Abstract

Introducing three ultrathin-strained layers in the channel forming heterostructure-on-insulator (HOI) cylindrical gate-all-around (CGAA) FET is the requisite at nano regime. The outermost-layer and the central-layer of the CGAA is strained silicon (s-Si) while the middle-layer sandwiched between the two s-Si layers is strained silicon germanium (s-SiGe). Congealing the channel with these strained layers quantum carrier confinement prompts enhances the carrier mobility and counter threshold voltage roll-off. The tri-layer HOI device enhances device performance in comparison to conventional silicon CGAA. The newly developed CGAA at 22 nm gate length displays 20.6% enhancement in on-current in comparison to silicon CGAA. Further analysis of the novel device shows 92% and 80.2% improvement in Ion /Ioff ratio as compared to silicon CGAA and strained channel rectangular GAA, respectively. The CGAA also provided 16.2% augmentation on drain current as compare to 22 nm strained silicon channel rectangular GAA FET.