1. (Invited) Toward GeSn Lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature. (18th August 2016) Authors: Mathews, Jay; Li, Zairui; Zhao, Yun; Gallagher, James; Agha, Imad; Menendez, Jose; Kouvetakis, John Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. CMOS Compatible in-SituN-Type Doping of Ge Using New Generation Doping Agents P(MH3)3 and As(MH3)3 (M=Si, Ge). (16th September 2015) Authors: Xu, Chi; Gallagher, James Dennis; Senaratne, Charutha; Sims, Patrick; Kouvetakis, John; Menendez, Jose Journal: ECS transactions Issue: Volume 69:Number 14(2015) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys. (August 2015) Authors: Xu, Chi; Senaratne, Charutha L.; Kouvetakis, John; Menéndez, José Journal: Solid-state electronics Issue: Volume 110(2015) Page Start: 76 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Crystalline Tetrahedral Phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As). (16th September 2015) Authors: Sims, Patrick; Aoki, Toshihiro; Menendez, Jose; Kouvetakis, John Journal: ECS transactions Issue: Volume 69:Number 14(2015) Page Start: 83 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Direct gap Group IV semiconductors for next generation Si-based IR photonics. Issue 1666 (7th July 2014) Authors: Kouvetakis, John; Gallagher, James; Menéndez, José Journal: MRS proceedings Issue: Issue 1666:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Doping of Direct Gap Ge1-ySny Alloys to Attain Electroluminescence and Enhanced Photoluminescence. (16th September 2015) Authors: Senaratne, Charutha Lasitha; Gallagher, James Dennis; Xu, Chi; Sims, Patrick; Menendez, Jose; Kouvetakis, John Journal: ECS transactions Issue: Volume 69:Number 14(2015) Page Start: 157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments. (20th March 2019) Authors: Wang, Buguo; Hogsed, Michael R; Harris, Thomas R; Wallace, Patrick M; Kouvetakis, John Journal: Semiconductor science and technology Issue: Volume 34:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Enhanced Performance Designs of Group-IV Light Emitting Diodes for Mid IR Photonic Applications. (16th September 2015) Authors: Gallagher, James Dennis; Senaratne, Charutha; Xu, Chi; Wallace, Patrick M; Menendez, Jose; Kouvetakis, John Journal: ECS transactions Issue: Volume 69:Number 14(2015) Page Start: 147 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Evolution of optical phonons in epitaxial Ge1−ySny structures. (18th September 2020) Authors: Kim, Young Chan; Lee, Taegeon; Ryu, Mee‐Yi; Kouvetakis, John; Rho, Heesuk Journal: Journal of Raman spectroscopy Issue: Volume 51:Number 11(2020) Page Start: 2305 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High Resolution EELS Study of Ge1-ySny and Ge1-x-ySixSny Alloys. (August 2014) Authors: Jiang, Liying; Aoki, Toshihiro; Kouvetakis, John; Menéndez, José Journal: Microscopy and microanalysis Issue: Volume 20(2014)Supplement 3 Page Start: 520 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗