1. Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy. (17th November 2016) Authors: Kusaba, Akira; Kangawa, Yoshihiro; Kempisty, Pawel; Shiraishi, Kenji; Kakimoto, Koichi; Koukitu, Akinori Journal: Applied physics express Issue: Volume 9:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach. Issue 6 (21st January 2021) Authors: Yosho, Daichi; Matsuo, Yuriko; Kusaba, Akira; Kempisty, Pawel; Kangawa, Yoshihiro; Murakami, Hisashi; Koukitu, Akinori Journal: CrystEngComm Issue: Volume 23:Issue 6(2021) Page Start: 1423 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2. (8th March 2016) Authors: Takada, Kazuya; Nomura, Kazushiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori; Kumagai, Yoshinao Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy. Issue 4 (22nd January 2020) Authors: Yamaguchi, Akira; Oozeki, Daisuke; Kawamoto, Naoya; Takekawa, Nao; Bulsara, Mayank; Murakami, Hisashi; Kumagai, Yoshinao; Matsumoto, Koh; Koukitu, Akinori Other Names: Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy. (15th February 2017) Authors: Inatomi, Yuya; Kangawa, Yoshihiro; Kakimoto, Koichi; Koukitu, Akinori Journal: Japanese journal of applied physics Issue: Volume 56:Number 3(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy. (30th November 2015) Authors: Hirasaki, Takahide; Hasegawa, Tomoyasu; Meguro, Misaki; Thieu, Quang Tu; Murakami, Hisashi; Kumagai, Yoshinao; Monemar, Bo; Koukitu, Akinori Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates. (25th April 2016) Authors: Alden, Dorian; Bryan, Zachary; Gaddy, Benjamin; Bryan, Isaac; Callsen, Gordon; Koukitu, Akinori; Kumagai, Yoshinao; Hoffmann, Axel; Irving, Doug; Sitar, Zlatko; Collazo, Ramon Journal: ECS transactions Issue: Volume 72:Number 5(2016) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3. Issue 8 (3rd February 2017) Authors: Iso, Kenji; Matsuda, Karen; Takekawa, Nao; Murakami, Hisashi; Koukitu, Akinori Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Recent progress in Ga2O3 power devices. (18th January 2016) Authors: Higashiwaki, Masataka; Sasaki, Kohei; Murakami, Hisashi; Kumagai, Yoshinao; Koukitu, Akinori; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu Journal: Semiconductor science and technology Issue: Volume 31:Number 3(2016:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Suppression of twin formation for the growth of InN(10‐1‐3) on GaAs(110) by metalorganic vapor phase epitaxy. Issue 3 (21st December 2012) Authors: Murakami, Hisashi; Takenaka, Sae; Hotta, Tetsuro; Kumagai, Yoshinao; Koukitu, Akinori; Toropov, Alexey; Ivanov, Sergey Journal: Physica status solidi Issue: Volume 10:Issue 3(2013:Mar.) Page Start: 472 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗