1. Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID. (1st January 2023) Authors: Termo, G.; Borghello, G.; Faccio, F.; Michelis, S.; Koukab, A.; Sallese, J.-M. Journal: Journal of instrumentation Issue: Volume 18:Number 1(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗