1. Cross-Disciplinary Physics and Related Areas of Science and Technology : Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping. (4th February 2015) Authors: Li, Shi-Yan; Zhou, Xu-Liang; Kong, Xiang-Ting; Li, Meng-Ke; Mi, Jun-Ping; Bian, Jing; Wang, Wei; Pan, Jiao-Qing Journal: Chinese physics letters Issue: Volume 32:Number 2(2015:Feb.) Page Start: 028101 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High-Performance In0.23Ga0.77 As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD. (March 2015) Authors: Kong, Xiang-Ting; Zhou, Xu-Liang; Li, Shi-Yan; Qiao, Li-Jun; Liu, Hong-Gang; Wang, Wei; Pan, Jiao-Qing Journal: Chinese physics letters Issue: Volume 32:Number 3(2015:Mar.) Page Start: L517 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping. (1st February 2015) Authors: Li, Shi-Yan; Zhou, Xu-Liang; Kong, Xiang-Ting; Li, Meng-Ke; Mi, Jun-Ping; Bian, Jing; Wang, Wei; Pan, Jiao-Qing Journal: Chinese physics letters Issue: Volume 32:Number 2(2015:Feb.) Page Start: 028101 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗