High-Performance In0.23Ga0.77 As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD. (March 2015)

• Record Type: Journal Article
• Authors: Kong, Xiang-Ting; Zhou, Xu-Liang; Li, Shi-Yan; Qiao, Li-Jun; Liu, Hong-Gang; Wang, Wei; Pan, Jiao-Qing
• Is Part Of: Chinese physics letters. Volume 32:Number 3(2015:Mar.)
• Page Start: L517
• Publication Date: 2015-03
• Subjects: Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1088/0256-307X/32/3/037301
• Languages: English
• ISSNs: 0256-307X

Abstract

<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>We demonstrate high-performance In_0.23 Ga_0.77 As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with high on-current to off-current (I_on/I_off) ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition (MOCVD). The 2 μm channel-length devices exhibit a peak extrinsic transconductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm²/Vs extracted by the split C-V method. Furthermore, the I_on/I_off ratio is significantly improved from approximately 4.5 × 10³ up to approximately 4.32 × 10⁴ by controlling the etch thickness of In_0.49 Ga_0.51 P. The high drain current and high I_on/I_off ratio of the In_0.23 Ga_0.77 As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.</p> </abstract>