1. Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth. Issue 3 (30th January 2013) Authors: Iida, Daisuke; Kondo, Yasunari; Sowa, Mihoko; Sugiyama, Toru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Physica status solidi Issue: Volume 7:Issue 3(2013:Mar.) Page Start: 211 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures. (1st October 2015) Authors: Iwaya, Motoaki; Yamamoto, Taiji; Iida, Daisuke; Kondo, Yasunari; Sowa, Mihoko; Matsubara, Hiroyuki; Ishihara, Koji; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Japanese journal of applied physics Issue: Volume 54:Number 11(2015:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗