1. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. (12th December 2016) Authors: Oh, Seung Kyu; Jang, Taehoon; Pouladi, Sara; Jo, Young Je; Ko, Hwa-Young; Ryou, Jae-Hyun; Kwak, Joon Seop Journal: Applied physics express Issue: Volume 10:Number 1(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗