1. (Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI). (8th September 2015) Authors: Triyoso, Dina; Carter, Rick; Kluth, Jon; Luning, Scott; Child, Amy; Wahl, Jeremy; Mulfinger, Bob; Punchihewa, Kasun; Kumar, Anil; Kang, Laegu; Sporer, Ryan; Chen, Xiaobo; Straub, Sherry; Bohra, Girish; Patil, Suraj; Zhang, Xing; Chen, Alex; Togo, Mitsuhiro; Pal, Rohit Journal: ECS transactions Issue: Volume 69:Number 5(2015) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Buried SiGe as a performance booster in n-channel FDSOI MOSFETs. (December 2019) Authors: Clifton, Paul; Goebel, Andreas; Mulfinger, Robert; Child, Amy; Straub, Sherry; Sporer, Ryan; Carter, Rick; Kluth, Jon; Schaeffer, Jamie; Nguyen, Bich-Yen; Chabanne, Guillaume; Daval, Nicolas; Schwarzenbach, Walter; Hemkar, Manish; Chu, Schubert; Moffatt, Steve Journal: Solid-state electronics Issue: Volume 162(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Low Power FDSOI Technology and Devices for RF Applications. (18th August 2016) Authors: Schwan, Christoph; Chew, Kok Wai; Feudel, Thomas; Kammler, Thorsten; Faul, Juergen; Kang, Laegu; Taylor, Richard; Huschka, Andreas; Kluth, Jon; Carter, Rick; McKay, Thomas; Nowak, Edward; Watts, Josef; Harame, David L. Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗