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You searched for: Author/Creator Klehr, A.- Klehr, A. [remove] 7
- 621.381 7
- Electronics -- Periodicals 7
- GaN‐AlN -- size 142.0 mm -- wavelength 904.0 nm -- time 3.6 ns -- peak optical power -- emission wavelength -- gate width -- AlN ceramic board -- conduction current density -- ammonothermal substrates -- parasitic inductive loops -- gallium arsenide‐based broad area distributed Bragg reflector diode laser -- direct chip‐on‐chip assembly -- laser pulses -- transistor chip -- laser diode integration assembly -- low inductance vertical GaN MISFET -- gate periphery chips -- on‐state sheet resistance -- high‐speed driver solution -- vertical gallium nitride metal‐insulator‐semiconductor field‐effect transistors -- chip‐on‐chip high speed laser driving applications 1
- MISFET -- aluminium compounds -- current density -- wide band gap semiconductors -- gallium compounds -- semiconductor lasers -- III‐V semiconductors -- integrated optoelectronics -- electrical resistivity -- electrical conductivity 1
- asynchronous optical sampling terahertz time‐domain spectroscopy -- semiconductor laser‐based ultrashort pulse source -- hybrid mode‐locked edge‐emitting external cavity laser -- wavelength 830 nm 1
- compact high‐current diode laser -- nanosecond‐pulse source -- high efficiency -- output energy -- electronic driver -- GaN transistors -- transistor–transistor logic compatible input pulses -- peak current -- electrical efficiency -- tapered ridge waveguide bar -- energy 13 muJ -- wavelength 920 nm -- time 20 ns to 50 ns -- GaN 1
- distributed Bragg reflector laser array -- surface gratings -- small footprint diode laser array -- third‐order gratings -- vertical waveguide structure -- ridge waveguides -- side mode suppression ratios -- output powers -- pump current -- wavelength 905 nm -- current 40 mA -- AlGaAs 1
- distributed Bragg reflector lasers -- semiconductor laser arrays -- diffraction gratings -- aluminium compounds -- gallium arsenide -- III‐V semiconductors -- ridge waveguides -- optical pumping -- laser modes 1
- high peak power laser pulses -- dispersion optimized mode‐locked semiconductor laser -- electrically pumped passively mode‐locked edge‐emitting semiconductor laser -- external cavity setup -- intracavity dispersion management -- IDM -- pulse compressor -- tapered diode laser amplifier -- power 6.5 kW -- wavelength 850 nm 1
- high‐speed optical techniques -- laser cavity resonators -- laser mode locking -- optical dispersion -- optical pulse compression -- optical pumping -- semiconductor lasers 1