High peak power pulses from dispersion optimised modelocked semiconductor laser. Issue 13 (1st June 2013)

• Record Type: Journal Article
• Authors: Balzer, J.C.; Schlauch, T.; Klehr, A.; Erbert, G.; Tränkle, G.; Hofmann, M.R.
• Is Part Of: Electronics letters. Volume 49:Issue 13(2013)
• Page Start: 838
• Page End: 839
• Publication Date: 2013-06-01
• Subjects: high‐speed optical techniques -- laser cavity resonators -- laser mode locking -- optical dispersion -- optical pulse compression -- optical pumping -- semiconductor lasers; high peak power laser pulses -- dispersion optimized mode‐locked semiconductor laser -- electrically pumped passively mode‐locked edge‐emitting semiconductor laser -- external cavity setup -- intracavity dispersion management -- IDM -- pulse compressor -- tapered diode laser amplifier -- power 6.5 kW -- wavelength 850 nm; high‐speed optical techniques -- laser cavity resonators -- laser mode locking -- optical dispersion -- optical pulse compression -- optical pumping -- semiconductor lasers; high peak power laser pulses -- dispersion optimized mode‐locked semiconductor laser -- electrically pumped passively mode‐locked edge‐emitting semiconductor laser -- external cavity setup -- intracavity dispersion management -- IDM -- pulse compressor -- tapered diode laser amplifier -- power 6.5 kW -- wavelength 850 nm; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.1447
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Presented is an electrically pumped passively modelocked edge‐emitting semiconductor laser system in an external cavity setup with intracavity dispersion management. This concept, in combination with a pulse compressor, provides pulses as short as 158 fs. By expanding the setup with a tapered diode laser amplifier, peak powers up to 6.5 kW were achieved in the 850 nm wavelength range.