1. Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy. (18th April 2016) Authors: Taniyama, Yuki; Yamaguchi, Yohei; Takatsu, Hiroaki; Sumi, Tomoaki; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method. (22nd May 2019) Authors: Takino, Junichi; Sumi, Tomoaki; Okayama, Yoshio; Nobuoka, Masaki; Kitamoto, Akira; Imanishi, Msayuki; Yoshimura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method. (3rd July 2020) Authors: Takino, Junichi; Sumi, Tomoaki; Okayama, Yoshio; Kitamoto, Akira; Imanishi, Masayuki; Yoshimura, Masashi; Asai, Naomi; Ohta, Hiroshi; Mishima, Tomoyoshi; Mori, Yusuke Journal: Applied physics express Issue: Volume 13:Number 7(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions. Issue 8 (1st March 2017) Authors: Kawamura, Takahiro; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Morikawa, Yoshitada; Kangawa, Yoshihiro; Kakimoto, Koichi Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy. (27th August 2021) Authors: Takino, Junichi; Sumi, Tomoaki; Okayama, Yoshio; Kitamoto, Akira; Usami, Shigeyoshi; Imanishi, Masayuki; Yoshimura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 60:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor. (7th April 2015) Authors: Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C. (1st March 2022) Authors: Shimizu, Ayumu; Usami, Shigeyoshi; Kamiyama, Masahiro; Kawanami, Itsuki; Kitamoto, Akira; Imanishi, Masayuki; Maruyama, Mihoko; Yoshimura, Masashi; Hata, Masahiko; Isemura, Masashi; Mori, Yusuke Journal: Applied physics express Issue: Volume 15:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition. (27th August 2020) Authors: Shimizu, Ayumu; Tsuno, Shintaro; Kamiyama, Masahiro; Ishibashi, Keiju; Kitamoto, Akira; Imanishi, Masayuki; Yoshimura, Masashi; Hata, Masahiko; Isemura, Masashi; Mori, Yusuke Journal: Applied physics express Issue: Volume 13:Number 9(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas. (30th April 2015) Authors: Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 6(2015:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor. (4th April 2016) Authors: Yamaguchi, Yohei; Taniyama, Yuuki; Takatsu, Hiroaki; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗