1. Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics. Issue 4 (30th December 2022) Authors: Moon, Seokho; Kim, Jiye; Park, Jeonghyeon; Im, Semi; Kim, Jawon; Hwang, Inyong; Kim, Jong Kyu Journal: Advanced materials Issue: Volume 35:Issue 4(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Organic Field‐Effect Transistors: The Origin of Excellent Gate‐Bias Stress Stability in Organic Field‐Effect Transistors Employing Fluorinated‐Polymer Gate Dielectrics (Adv. Mater. 42/2014). (November 2014) Authors: Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon Journal: Advanced materials Issue: Volume 26:Number 42(2014) Page Start: 7280 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Solvent Additive to Achieve Highly Ordered Nanostructural Semicrystalline DPP Copolymers: Toward a High Charge Carrier Mobility. (2nd October 2013) Authors: An, Tae Kyu; Kang, Il; Yun, Hui‐jun; Cha, Hyojung; Hwang, Jihun; Park, Seonuk; Kim, Jiye; Kim, Yu Jin; Chung, Dae Sung; Kwon, Soon‐Ki; Kim, Yun‐Hi; Park, Chan Eon Journal: Advanced materials Issue: Volume 25:Number 48(2013) Page Start: 7003 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. The Origin of Excellent Gate‐Bias Stress Stability in Organic Field‐Effect Transistors Employing Fluorinated‐Polymer Gate Dielectrics. (29th September 2014) Authors: Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon Journal: Advanced materials Issue: Volume 26:Number 42(2014) Page Start: 7241 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗