The Origin of Excellent Gate‐Bias Stress Stability in Organic Field‐Effect Transistors Employing Fluorinated‐Polymer Gate Dielectrics. (29th September 2014)

• Record Type: Journal Article
• Authors: Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon
• Is Part Of: Advanced materials. Volume 26:Number 42(2014)
• Page Start: 7241
• Page End: 7246
• Publication Date: 2014-09-29
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201402363
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201402363-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Tuning of the energetic barriers</bold> to charge transfer at the semiconductor/dielectric interface in organic field‐effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate‐bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2cn0xghk" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>