1. Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems. (9th July 2021) Authors: Scharnetzky, J; Baumann, P; Reichl, C; Karl, H; Dietsche, W; Wegscheider, W Journal: Semiconductor science and technology Issue: Volume 36:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗