1. A multi-energy level agnostic approach for defect generation during TDDB stress. (July 2022) Authors: Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid Journal: Solid-state electronics Issue: Volume 193(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A multi-energy level agnostic simulation approach to defect generation. (October 2021) Authors: Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid Journal: Solid-state electronics Issue: Volume 184(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials. (24th June 2021) Authors: Kim, Yeonsu; Kaczer, Ben; Verreck, Devin; Grill, Alexander; Kim, Doyoon; Song, Jaeick; Diaz‐Fortuny, Javier; Vici, Andrea; Park, Jongseon; Van Beek, Simon; Simicic, Marko; Bury, Erik; Chasin, Adrian; Linten, Dimitri; Lee, Jaewoo; Chun, Jungu; Kim, Seongji; Seo, Beumgeun; Choi, Junhee; Shim, Joon ... Journal: Advanced Electronic Materials Issue: Volume 7:Number 9(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications. Issue 9 (6th February 2022) Authors: Lee, Kookjin; Ji, Hyunjin; Kim, Yanghee; Kaczer, Ben; Lee, Hyebin; Ahn, Jae‐Pyoung; Choi, Junhee; Grill, Alexander; Panarella, Luca; Smets, Quentin; Verreck, Devin; Van Beek, Simon; Chasin, Adrian; Linten, Dimitri; Na, Junhong; Lee, Jae Woo; De Wolf, Ingrid; Kim, Gyu‐Tae Journal: Advanced materials interfaces Issue: Volume 9:Issue 9(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors. (7th February 2023) Authors: Slassi, Amine; Medondjio, Linda‐Sheila; Padovani, Andrea; Tavanti, Francesco; He, Xu; Clima, Sergiu; Garbin, Daniele; Kaczer, Ben; Larcher, Luca; Ordejón, Pablo; Calzolari, Arrigo Journal: Advanced Electronic Materials Issue: Volume 9:Number 4(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors. Issue 5 (23rd March 2016) Authors: Popovici, Mihaela; Kaczer, Ben; Afanas'ev, Valeri V.; Sereni, Gabriele; Larcher, Luca; Redolfi, Augusto; Elshocht, Sven Van; Jurczak, Malgorzata Journal: Physica status solidi Issue: Volume 10:Issue 5(2016) Page Start: 420 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor. (1st April 2021) Authors: Lee, Kookjin; Choi, Junhee; Kaczer, Ben; Grill, Alexander; Lee, Jae Woo; Van Beek, Simon; Bury, Erik; Diaz‐Fortuny, Javier; Chasin, Adrian; Lee, Jaewoo; Chun, Jungu; Shin, Dong Hoon; Na, Junhong; Cho, Hyeran; Lee, Sang Wook; Kim, Gyu‐Tae Journal: Advanced functional materials Issue: Volume 31:Number 23(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?. Issue 48 (10th April 2022) Authors: Waltl, Michael; Knobloch, Theresia; Tselios, Konstantinos; Filipovic, Lado; Stampfer, Bernhard; Hernandez, Yoanlys; Waldhör, Dominic; Illarionov, Yury; Kaczer, Ben; Grasser, Tibor Journal: Advanced materials Issue: Volume 34:Issue 48(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Separation of electron and hole trapping components of PBTI in SiON nMOS transistors. (November 2020) Authors: Waltl, Michael; Stampfer, Bernhard; Rzepa, Gerhard; Kaczer, Ben; Grasser, Tibor Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗