Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor. (1st April 2021)

• Record Type: Journal Article
• Authors: Lee, Kookjin; Choi, Junhee; Kaczer, Ben; Grill, Alexander; Lee, Jae Woo; Van Beek, Simon; Bury, Erik; Diaz‐Fortuny, Javier; Chasin, Adrian; Lee, Jaewoo; Chun, Jungu; Shin, Dong Hoon; Na, Junhong; Cho, Hyeran; Lee, Sang Wook; Kim, Gyu‐Tae
• Is Part Of: Advanced functional materials. Volume 31:Number 23(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-04-01
• Subjects: defects -- dual‐gate ReS2 -- field‐effect transistors -- hexagonal boron nitride -- 2D materials; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202100625
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: In this study, high‐performance few‐layered ReS2 field‐effect transistors (FETs), fabricated with hexagonal boron nitride (h‐BN) as top/bottom dual gate dielectrics, are presented. The performance of h‐BN dual gated ReS2 FET having a trade‐off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h‐BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h‐BN dual‐gated ReS2 with a high mobility of 46.1 cm 2 V −1 s −1, a high current on/off ratio of ≈10 6, a subthreshold swing of 2.7 V dec −1, and a low effective interface trap density ( N t, eff ) of 7.85 × 10 10 cm −2 eV −1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time‐dependent current, and low‐frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y‐function method as a function of constant top gate bias. Abstract : Implementing compact modeling through analytical choice maps and extracting approximate their interlayer resistances in h‐BN dual‐gated ReS2 . Optimization and interpretation of performances in ReS2 field‐effect transistors are conducted in parallel with secondary g m peaks, threshold voltages, subthreshold swing, mobility through DC analysis, time‐dependent current, low‐frequency noise, and technology computer aided design simulation analysis.