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You searched for: Author/Creator Kaczer, B.

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1. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. (February 2018)

2. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. Issue 49 (23rd May 2016)

4. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016)

5. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016)