1. (Invited) Characterization of UV Excitation Accelerated Material Changes on as-Grown SiC Epitaxial Layers and Their Impact on Defect Detection. (23rd July 2018) Authors: Das, Hrishikesh; Sunkari, Swapna; Justice, Joshua; Konstantinov, Andrei; Gumaelius, Krister; Svedberg, Jan-Olov; Allerstam, Fredrik Journal: ECS transactions Issue: Volume 86:Number 12(2018) Page Start: 69 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication. (8th September 2020) Authors: Das, Hrishikesh; Sunkari, Swapna; Justice, Joshua; Malousek, Roman; Chochol, Jan; Wada, Ryota; Kuroi, Takashi Journal: ECS transactions Issue: Volume 98:Number 6(2020) Page Start: 119 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles. (1st May 2022) Authors: Wada, Ryota; Nagayama, Tsutomu; Tokoro, Nobuhiro; Kuroi, Takashi; Das, Hrishikesh; Sunkari, Swapna; Justice, Joshua Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗