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3. High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation. Issue 1635 (17th February 2014)

4. High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation. Issue 1635 (2014)

5. Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al. Issue 5 (13th February 2015)

6. The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures. (1st June 2021)