High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation. Issue 1635 (17th February 2014)

• Record Type: Journal Article
• Authors: Taube, Andrzej; Kozubal, Maciej; Kaczmarski, Jakub; Juchniewicz, Marcin; Barcz, Adam; Dyczewski, Jan; Jakieła, Rafał; Dynowska, Elżbieta; Borysiewicz, Michał Adam; Prystawko, Paweł; Jasiński, Jakub; Borowicz, Paweł; Kamińska, Eliana; Piotrowska, Anna
• Is Part Of: MRS proceedings. Issue 1635:(2014)
• Publication Date: 2014-02-17
• Subjects: ion-implantation, -- III-V, -- N; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.220
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al + ions with energies of 800 keV and 300 keV with doses of 1.5×10 13 ion/cm 2 and 1×10 13 ion/cm 2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×10 11 Ω/□ and increased to 1.17×10 14 Ω/□ and 3.29×10 12 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×10 8 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.