1. (Invited) 14nm FDSOI Technology for High-Speed and Energy-Efficient CMOS. (27th March 2015) Authors: Weber, Olivier; Josse, Emmanuel; Haond, Michel Journal: ECS transactions Issue: Volume 66:Number 5(2015) Page Start: 37 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) UTBB FDSOI PMOSFETs Including Strained SiGe Channels at the 14nm Technology Node and Beyond. (18th August 2016) Authors: Andrieu, François; Berthelon, Remy; Morvan, Simeon; Gourhant, Olivier; Baylac, Elise; Le Royer, Cyrille; Dutartre, Didier; Josse, Emmanuel; Haond, Michel Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 66‐1: High Resolution Quantum Dot Global Shutter Imagers. Issue 1 (28th June 2021) Authors: Steckel, Jonathan S.; Pattantyus-Abraham, Andras G.; Josse, Emmanuel; Mazaleyrat, Eric; Rochereau, Krysten Journal: Digest of technical papers Issue: Volume 52:Issue 1(2021) Page Start: 975 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. In depth characterization of electron transport in 14 nm FD-SOI CMOS devices. (October 2015) Authors: Shin, Minju; Shi, Ming; Mouis, Mireille; Cros, Antoine; Josse, Emmanuel; Kim, Gyu-Tae; Ghibaudo, Gérard Journal: Solid-state electronics Issue: Volume 112(2015) Page Start: 13 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions. (June 2015) Authors: Shin, Minju; Shi, Ming; Mouis, Mireille; Cros, Antoine; Josse, Emmanuel; Kim, Gyu-Tae; Ghibaudo, Gérard Journal: Solid-state electronics Issue: Volume 108(2015) Page Start: 30 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs. (January 2015) Authors: Shin, Minju; Shi, Ming; Mouis, Mireille; Cros, Antoine; Josse, Emmanuel; Mukhopadhyay, Sutirha; Piot, Benjamin; Kim, Gyu-Tae; Ghibaudo, Gérard Journal: Solid-state electronics Issue: Volume 103(2015) Page Start: 229 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗