1. Non-volatile memory storage in tri-layer structures using the intrinsically ferromagnetic semiconductors GdN and DyN. (1st December 2022) Authors: Devese, Sam; Pot, Catherine; Natali, Franck; Granville, Simon; Plank, Natalie; Ruck, Ben J; Joe Trodahl, H; Holmes-Hewett, William Journal: Nano express Issue: Volume 3:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗