Non-volatile memory storage in tri-layer structures using the intrinsically ferromagnetic semiconductors GdN and DyN. (1st December 2022)

• Record Type: Journal Article
• Authors: Devese, Sam; Pot, Catherine; Natali, Franck; Granville, Simon; Plank, Natalie; Ruck, Ben J; Joe Trodahl, H; Holmes-Hewett, William
• Is Part Of: Nano express. Volume 3:Number 4(2022)
• Publication Date: 2022-12-01
• Subjects: rare earth nitrides -- ferromagnetic semiconductors -- magnetic tunnel junctions -- giant magnetoresistance -- memory elements -- non-volatile -- retention; Nanotechnology -- Periodicals; Nanoscience -- Periodicals; 620.5
• DOI: 10.1088/2632-959X/acaf92
• Languages: English
• ISSNs: 2632-959X

Abstract

Abstract: We report on the potential use of the intrinsic ferromagnetic rare earth nitride (REN) semiconductors as ferromagnetic electrodes in tunnelling magnetoresistance and giant magnetoresistance device structures for non-volatile memory storage devices. Non-volatile memory elements utilising magnetic materials have been an industry standard for decades. However, the typical metallic ferromagnets and dilute magnetic semiconductors used lack the ability to independently tune the magnetic and electronic properties. In this regard, the rare earth nitride series offer an ultimately tuneable group of materials. Here we have fabricated two tri-layer structures using intrinsically ferromagnetic rare earth nitride semiconductors as the ferromagnetic layers. We have demonstrated both a non-volatile magnetic tunnel junction (MTJ) and an in-plane conduction device using GdN and DyN as the ferromagnetic layers, with a maximum difference in resistive states of ∼1.2% at zero-field. GdN and DyN layers were shown to be sufficiently decoupled and individual magnetic transitions were observed for each ferromagnetic layer.