1. Intrinsically stretchable all-carbon-nanotube transistors with styrene–ethylene–butylene–styrene as gate dielectrics integrated by photolithography-based process. Issue 14 (25th February 2020) Authors: Jiao, Haoxuan; Zhang, Min; Du, Chunhui; Zhang, Ziwei; Huang, Weihong; Huang, Qiuyue Journal: RSC advances Issue: Volume 10:Issue 14(2020) Page Start: 8080 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration. (9th March 2020) Authors: Zhang, Ziwei; Du, Chunhui; Jiao, Haoxuan; Zhang, Min Journal: Advanced Electronic Materials Issue: Volume 6:Number 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Thin‐Film Transistors: Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (Adv. Electron. Mater. 5/2020). (11th May 2020) Authors: Zhang, Ziwei; Du, Chunhui; Jiao, Haoxuan; Zhang, Min Journal: Advanced Electronic Materials Issue: Volume 6:Number 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Ultra-high drivability, high-mobility, low-voltage and high-integration intrinsically stretchable transistors. Issue 46 (19th October 2020) Authors: Huang, Weihong; Jiao, Haoxuan; Huang, Qiuyue; Zhang, Jiaona; Zhang, Min Journal: Nanoscale Issue: Volume 12:Issue 46(2020) Page Start: 23546 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗