Abstract : By adopting polyvinyl alcohol/SiO2 hybrid layer as dielectric and carbon nanotubes as channel and source/drain/gate, high‐performance flexible and stretchable thin‐film transistors are realized by Min Zhang and co‐workers in article number 1901133 using only traditional photolithography‐etching and low‐temperature solution processing. The fabricated devices could push many soft application scenarios a step forward.