1. A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel. (1st February 2015) Authors: Jia, Ze; Xu, Jian-Long; Wu, Xiao; Zhang, Ming-Ming; Liou, Juin-J. Journal: Chinese physics letters Issue: Volume 32:Number 2(2015:Feb.) Page Start: 028501 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Cross-Disciplinary Physics and Related Areas of Science and Technology : A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel. (4th February 2015) Authors: Jia, Ze; Xu, Jian-Long; Wu, Xiao; Zhang, Ming-Ming; Liou, Juin-J. Journal: Chinese physics letters Issue: Volume 32:Number 2(2015:Feb.) Page Start: 028501 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films. Issue 1633 (2014) Authors: Jia, Ze; Xu, Jianlong; Wu, Xiao; Zhang, Mingming; Zhang, Naiwen; Liu, Jizhi; Liu, Zhiwei; Liou, Juin J. Journal: MRS proceedings Issue: Issue 1633:(2014) Page Start: 131 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Reference voltage generation scheme enhancing speed and reliability for 1T1C‐type FRAM. Issue 3 (1st January 2014) Authors: Jia, Ze; Zhang, Gong; Liu, Jizhi; Liu, Zhiwei; Liou, Juin J. Journal: Electronics letters Issue: Volume 50:Issue 3(2014) Page Start: 154 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Study on leakage current properties of BiFeO3 thin films with Pb(Zr, Ti)O3 buffer layer. (13th November 2016) Authors: Jia, Ze; Wu, Xiao; Zhang, Mingming; Liou, Juin J. Journal: Ferroelectrics Issue: Volume 504(2016) Page Start: 172 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Two‐transistor and two‐magnetic‐tunnel‐junction multi‐level cell structured spin‐transfer torque magnetic random access memory with optimisations on power and reliability. Issue 2 (1st January 2016) Authors: Tao, Zihao; Jia, Ze Journal: Electronics letters Issue: Volume 52:Issue 2(2016) Page Start: 104 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗