1. Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device. (9th August 2018) Authors: Kim, Sohyeon; Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Ku, Boncheol; Choi, Changhwan Journal: Nanotechnology Issue: Volume 29:Number 41(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2. (November 2018) Authors: Jung, Woo Suk; Lim, Donghwan; Han, Hoonhee; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Choi, Changhwan Journal: Solid-state electronics Issue: Volume 149(2018) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Photo-synaptic properties of CH3NH3Pb1-xMnxBr2x+1 hybrid perovskite thin film-based artificial synapse. Issue 7 (1st April 2023) Authors: Jeon, Yu-Rim; Lee, Dohee; Cho, Han Bin; Ku, Boncheol; Im, Won Bin; Choi, Changhwan Journal: Ceramics international Issue: Volume 49:Issue 7(2023) Page Start: 11140 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. The coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computing. Issue 26 (29th June 2020) Authors: Abbas, Haider; Abbas, Yawar; Hassan, Gul; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Ku, Boncheol; Kang, Chi Jung; Choi, Changhwan Journal: Nanoscale Issue: Volume 12:Issue 26(2020) Page Start: 14120 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film. (23rd May 2019) Authors: Abbas, Yawar; Dugasani, Sreekantha Reddy; Raza, Muhammad Tayyab; Jeon, Yu-Rim; Park, Sung Ha; Choi, Changhwan Journal: Nanotechnology Issue: Volume 30:Number 33(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗