Author/Creator: Jang, Jun Tae - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Jang, Jun Tae

1. 19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors. Issue 1 (30th May 2018)

Authors:: Jang, Jun Tae; Yu, Hye Ri; Ahn, Geumho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Yong-Sung; Oh, Saeroonter; Baeck, Ju Heyuck; Bae, Jong Uk; Park, Kwon-Shik; Yoon, Soo Young; Kang, In Byeong; Kim, Dae Hwan
Journal:: Digest of technical papers
Issue:: Volume 49:Issue 1(2018)
Page Start:: 232
Record Type:: Journal Article
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2. A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence. (April 2020)

Authors:: Jang, Jun Tae; Min, Jungi; Kim, Donguk; Park, Jingyu; Choi, Sung-Jin; Kim, Dong Myong; Cho, Seongjae; Kim, Dae Hwan
Journal:: Solid-state electronics
Issue:: Volume 166(2020)
Page Start:
Record Type:: Journal Article
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3. Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications. (February 2018)

Authors:: Jang, Jun Tae; Ko, Daehyun; Ahn, Geumho; Yu, Hye Ri; Jung, Haesun; Kim, Yeon Soo; Yoon, Chansoo; Lee, Sangik; Park, Bae Ho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan
Journal:: Solid-state electronics
Issue:: Volume 140(2018)
Page Start:: 139
Record Type:: Journal Article
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4. Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices. (February 2018)

Authors:: Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan
Journal:: Solid-state electronics
Issue:: Volume 140(2018)
Page Start:: 115
Record Type:: Journal Article
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5. Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications. (March 2022)

Authors:: Choi, Woo Sik; Jang, Jun Tae; Kim, Donguk; Yang, Tae Jun; Kim, Changwook; Kim, Hyungjin; Kim, Dae Hwan
Journal:: Chaos, solitons and fractals
Issue:: Volume 156(2022)
Page Start:
Record Type:: Journal Article
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6. LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory. (23rd April 2020)

Authors:: Jang, Jun Tae; Ahn, Geumho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Hyungjin; Kim, Dae Hwan
Journal:: Applied physics express
Issue:: Volume 13:Number 5(2020)
Page Start:
Record Type:: Journal Article
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7. Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors. (February 2018)

Authors:: Jung, Haesun; Choi, Sungju; Jang, Jun Tae; Yoon, Jinsu; Lee, Juhee; Lee, Yongwoo; Rhee, Jihyun; Ahn, Geumho; Yu, Hye Ri; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan
Journal:: Solid-state electronics
Issue:: Volume 140(2018)
Page Start:: 80
Record Type:: Journal Article
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