Author/Creator: Ishiguro, Tetsuro - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Ishiguro, Tetsuro

1. Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy. (4th April 2016)

Authors:: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu; Watanabe, Keiji
Journal:: Japanese journal of applied physics
Issue:: Volume 55:Number 5(2016:May)Supplement
Page Start:
Record Type:: Journal Article
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2. Direct observation of nanometer‐scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures. Issue 4 (21st January 2016)

Authors:: Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu
Journal:: Physica status solidi
Issue:: Volume 213:Issue 4(2016:Apr.)
Page Start:: 883
Record Type:: Journal Article
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3. Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer. (10th November 2017)

Authors:: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu
Journal:: Japanese journal of applied physics
Issue:: Volume 57:Number 1(2018)Supplement 1
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Record Type:: Journal Article
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4. Origin of unintentional gallium incorporation into AlN spacer layer grown by metalorganic vapor phase epitaxy. Issue 2 (4th October 2016)

Authors:: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu
Journal:: Physica status solidi
Issue:: Volume 254:Issue 2(2017)
Page Start:: n/a
Record Type:: Journal Article
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