1. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers. (13th November 2017) Authors: Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu Journal: Applied physics express Issue: Volume 10:Number 12(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Pyrolysis of dimethylhydrazine for the MOVPE growth of GaN and InN monitored by in‐situ quadrupole mass spectrometry. Issue 3 (17th January 2013) Authors: Thieu, Quang Tu; Inamoto, Takuro; Kuboya, Shigeyuki; Onabe, Kentaro; Toropov, Alexey; Ivanov, Sergey Journal: Physica status solidi Issue: Volume 10:Issue 3(2013:Mar.) Page Start: 405 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗