1. Control of GaN crystal habit by solution stirring in the Na-flux method. (8th November 2016) Authors: Murakami, Kosuke; Imade, Mamoru; Imanishi, Masayuki; Honjo, Masatomo; Imabayashi, Hiroki; Matsuo, Daisuke; Nakamura, Kosuke; Maruyama, Mihoko; Yoshimura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 56:Number 1(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Crack-free GaN substrates grown by the Na-flux method with a sapphire dissolution technique. (24th June 2016) Authors: Yamada, Takumi; Imanishi, Masayuki; Nakamura, Kosuke; Murakami, Kosuke; Imabayashi, Hiroki; Matsuo, Daisuke; Honjo, Masatomo; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke Journal: Applied physics express Issue: Volume 9:Number 7(2016:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy. (18th April 2016) Authors: Taniyama, Yuki; Yamaguchi, Yohei; Takatsu, Hiroaki; Sumi, Tomoaki; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Development of GaN substrate with a large diameter and small orientation deviation. Issue 8 (6th February 2017) Authors: Yoshida, Takehiro; Imanishi, Masayuki; Kitamura, Toshio; Otaka, Kenji; Imade, Mamoru; Shibata, Masatomo; Mori, Yusuke Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Fabrication of high-quality GaN substrates using the Na flux method. (31st March 2016) Authors: Maruyama, Mihoko; Nakamura, Koshi; Che, Songbek; Murakami, Kosuke; Takazawa, Hideo; Imanishi, Masayuki; Imade, Mamoru; Morita, Yukihiro; Mori, Yusuke Journal: Applied physics express Issue: Volume 9:Number 5(2016:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. First‐principles investigation of the GaN growth process in carbon‐added Na‐flux method. Issue 5 (19th November 2014) Authors: Kawamura, Takahiro; Imabayashi, Hiroki; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Morikawa, Yoshitada Journal: Physica status solidi Issue: Volume 252:Issue 5(2015:May) Page Start: 1084 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions. Issue 8 (1st March 2017) Authors: Kawamura, Takahiro; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Morikawa, Yoshitada; Kangawa, Yoshihiro; Kakimoto, Koichi Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor. (7th April 2015) Authors: Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Habit control during growth on GaN point seed crystals by Na-flux method. (2nd November 2016) Authors: Honjo, Masatomo; Imanishi, Masayuki; Imabayashi, Hiroki; Nakamura, Kosuke; Murakami, Kosuke; Matsuo, Daisuke; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 56:Number 1(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas. (30th April 2015) Authors: Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 6(2015:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗