1. Boiling heat transfer and flow characteristic of R32 inside a horizontal small-diameter microfin tube. (November 2018) Authors: Jige, Daisuke; Sagawa, Kentaro; Iizuka, Shota; Inoue, Norihiro Journal: International journal of refrigeration Issue: Volume 95(2018) Page Start: 73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation. (10th March 2023) Authors: Asai, Hidehiro; Iizuka, Shota; Mogami, Tohru; Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Kato, Kimihiko; Oka, Hiroshi; Mori, Takahiro Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit. (1st April 2023) Authors: Ban, Yoshisuke; Kato, Kimihiko; Iizuka, Shota; Murakami, Shigenori; Ishibashi, Koji; Moriyama, Satoshi; Mori, Takahiro; Ono, Keiji Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology. (14th August 2017) Authors: Mori, Takahiro; Iizuka, Shota; Nakayama, Takashi Journal: MRS communications Issue: Volume 7:Number 3(2017) Page Start: 541 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Mechanism of extraordinary gate-length dependence of quantum dot operation in isoelectronic-trap-assisted tunnel FETs. (5th November 2020) Authors: Iizuka, Shota; Asai, Hidehiro; Kato, Kimihiko; Hattori, Junichi; Fukuda, Koichi; Mori, Takahiro Journal: Applied physics express Issue: Volume 13:Number 11(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. ON current enhancement and variability suppression in tunnel FETs by the isoelectronic trap impurity of beryllium. (29th January 2021) Authors: Ban, Yoshisuke; Kato, Kimihiko; Iizuka, Shota; Moriyama, Satoshi; Ishibashi, Koji; Ono, Keiji; Mori, Takahiro Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Stability and electronic structures of isoelectronic impurity complexes in Si: First-principles study. (5th September 2016) Authors: Iizuka, Shota; Nakayama, Takashi Journal: Japanese journal of applied physics Issue: Volume 55:Number 10(2016:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study. (1st November 2017) Authors: Iizuka, Shota; Asayama, Yoshihiro; Nakayama, Takashi Journal: Materials science in semiconductor processing Issue: Volume 70(2017) Page Start: 279 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗