Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology. (14th August 2017)

• Record Type: Journal Article
• Authors: Mori, Takahiro; Iizuka, Shota; Nakayama, Takashi
• Is Part Of: MRS communications. Volume 7:Number 3(2017)
• Page Start: 541
• Page End: 550
• Publication Date: 2017-08-14
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1557/mrc.2017.63
• Languages: English
• ISSNs: 2159-6859

Abstract

Abstract: Abstract : The tunnel field-effect transistor (TFET) is one of the candidates replacing conventional metal–oxide–semiconductor field-effect transistors to realize low-power-consumption large-scale integration (LSI). The most significant issue in the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material having a low band-to-band tunneling probability and is not favored for the channel. However, a new technology to enhance tunneling current in Si-TFETs utilizing the isoelectronic trap (IET) technology was recently proposed. IET technology provides a new approach to realize low-power-consumption LSIs with TFETs. The present paper reviews the state-of-the-art research and future prospects of Si-TFETs with IET technology.