1. Effect of substrate polishing on the growth of graphene on 3C–SiC(111)/Si(111) by high temperature annealing. (21st March 2016) Authors: Gupta, B; Di Bernardo, I; Mondelli, P; Della Pia, A; Betti, M G; Iacopi, F; Mariani, C; Motta, N Journal: Nanotechnology Issue: Volume 27:Number 18(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗