Effect of substrate polishing on the growth of graphene on 3C–SiC(111)/Si(111) by high temperature annealing. (21st March 2016)

• Record Type: Journal Article
• Authors: Gupta, B; Di Bernardo, I; Mondelli, P; Della Pia, A; Betti, M G; Iacopi, F; Mariani, C; Motta, N
• Is Part Of: Nanotechnology. Volume 27:Number 18(2016)
• Publication Date: 2016-03-21
• Subjects: graphene -- SiC -- epitaxial growth -- annealing -- polishing; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/18/185601
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C–SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.