1. Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer. (23rd March 2015) Authors: Lin, Cheng-Li; Chang, Wei-Yi; Huang, Yen-Lun; Juan, Pi-Chun; Wang, Tse-Wen; Hung, Ke-Yu; Hsieh, Cheng-Yu; Kang, Tsung-Kuei; Shi, Jen-Bin Journal: Japanese journal of applied physics Issue: Volume 54:Number 4(2015:Apr.)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗